hat2203c Renesas Electronics Corporation., hat2203c Datasheet - Page 6

• Manufacturer Part Number: hat2203c
• Description: Silicon N Channel Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2203C
Rev.4.00 May.19, 2005 page 4 of 6
200
160
120
40
30
20
10
10
80
40
Static Drain to Source on State Resistance
2
0
4
6
0
8
0
−25
V
I
DD
D
Source to Drain Voltage
5 V
I
= 2 A
Dynamic Input Characteristics
D
0
Case Temperature
0.8
0.4
= 2 A
V
Reverse Drain Current vs.
4.5 V
Source to Drain Voltage
DD
Gate Charge
V
GS
25
= 5 V
vs. Temperature
V
10 V
20 V
= 2.5 V
DD
0.8
1.6
1 A
50
= 20 V
10 V
2 A
5 V
75
V
1.2
2.4
0.5 A
GS
Qg (nC)
1 A
Tc ( °C)
= 0 , -5 V
100 125 150
Pulse Test
Pulse Test
V
1.6
0.5 A
3.2
SD
V
GS
(V)
2.0
4.0
8
6
4
2
0
10000
1000
3000
1000
0.03
0.01
100
300
100
0.3
0.1
10
10
0.01
30
10
1
3
1
0.1
3
1
0
Drain to Source Voltage
Forward Transfer Admittance vs.
0.03
0.3
4
Tc = −25°C
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
Drain Current
t d(on)
0.1
75°C
8
1
t d(off)
Drain Current
0.3
12
3
25°C
I
I
16
D
10
D
1
t f
V
Pulse Test
Ciss
Coss
Crss
t r
DS
(A)
(A)
V
f = 1 MHz
V
GS
DS
= 10 V
30
20
3
= 0
(V)
100
10
24