upa1701ag Renesas Electronics Corporation., upa1701ag Datasheet

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upa1701ag

Manufacturer Part Number
upa1701ag
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPA1701AG
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
upa1701ag-E1
Manufacturer:
NEC
Quantity:
2 500
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
designed for power management applications and Li-ion
battery application.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Notes 1. PW
The PA1701A is N-Channel MOS Field Effect Transistor
2.5 V gate drive and low on-resistance
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
PA1701AG
iss
G12711EJ2V0DS00 (2nd edition)
May 2001 NS CP(K)
= 27m
= 40m
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 1040 pF (TYP.)
10 s, Duty Cycle
(MAX.) (V
(MAX.) (V
Note1
DS
A
GS
= 25°C)
GS
GS
= 0 V)
= 0 V)
= 4.0 V, I
= 2.5 V, I
Power SOP8
N-CHANNEL POWER MOS FET
PACKAGE
Note2
1 %
D
D
A
= 3.5 A)
= 3.5 A)
= 25°C, All terminals are connected.)
INDUSTRIAL USE
I
I
D(pulse)
V
V
The mark
D(DC)
T
T
P
GSS
DATA SHEET
DSS
stg
ch
T
SWITCHING
2
–55 to + 150
x 1.7mm
±7.0
MOS FIELD EFFECT TRANSISTOR
±12
±28
150
shows major revised points
2.0
30
W
°C
°C
V
V
A
A
PACKAGE DRAWING (Unit : mm)
8
1
5.37 MAX.
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
EQUIVARENT CIRCUIT
Gate
Gate
Protection
Diode
PA1701A
0.12 M
1,2,3
4
5,6,7,8
0.5 ±0.2
6.0 ±0.3
Source
Drain
4.4
©
; Source
; Gate
; Drain
Body
Diode
0.8
0.10
1998

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upa1701ag Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION The PA1701A is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES 2.5 V gate drive and low on-resistance R = 27m (MAX 4 DS(on)1 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...

Page 4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 10 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 25˚C A 25˚C 75˚C 125˚ Drain Current - ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 120 Channel Temperature - ...

Page 6

Data Sheet G12711EJ2V0DS PA1701A ...

Page 7

Data Sheet G12711EJ2V0DS PA1701A 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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