upa1704 Renesas Electronics Corporation., upa1704 Datasheet

upa1704

Manufacturer Part Number

upa1704

Description

Switching N-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1704.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

designed for power management applications and Li-ion

battery application.

FEATURES

Notes 1. PW

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

This PA1704 is N-Channel MOS Field Effect Transistor

2.5-V gate drive and low on-resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

iss

PA1704G

D12908EJ2V0DS00 (2nd edition)

May 2001 NS CP(K)

= 13 m

= 16 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

: C

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

= 2700 pF TYP.

10 s, Duty Cycle

MAX. (V

Note1

= 25°C)

= 0 V)

= 4.0 V, I

= 2.5 V, I

Power SOP8

N-CHANNEL POWER MOS FET

PACKAGE

Note2

1 %

The mark

= 5.0 A)

= 25°C, All terminals are connected.)

INDUSTRIAL USE

D(pulse)

D(DC)

DSS

GSS

DATA SHEET

stg

SWITCHING

shows major revised points.

–55 to + 150

x 0.7 mm

MOS FIELD EFFECT TRANSISTOR

±12

±10

±40

150

2.0

°C

PACKAGE DRAWING (Unit : mm)

5.37 MAX.

0.40

1.27

+0.10

–0.05

0.78 MAX.

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.12 M

Source

Drain

1,2,3

5,6,7,8

0.5 ±0.2

PA1704

6.0 ±0.3

4.4

Body

Diode

; Source

; Gate

; Drain

1998, 1999

0.8

0.10

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upa1704 Summary of contents

Page 1

DESCRIPTION This PA1704 is N-Channel MOS Field Effect Transistor designed for power management applications and Li-ion battery application. FEATURES 2.5-V gate drive and low on-resistance MAX 4 DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 100 10 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 25˚ 0 Drain Current ...

Page 4

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 D(pulse) ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 150 T - Channel Temperature - ˚C ch CAPACITANCE vs. ...

Page 6

Data Sheet D12908EJ2V0DS PA1704 ...

Page 7

Data Sheet D12908EJ2V0DS PA1704 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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