upa1709g Renesas Electronics Corporation., upa1709g Datasheet
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upa1709g
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upa1709g Summary of contents
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DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES Low on-resistance R = 9.3 m (TYP.) (V DS(on 13.8 m (TYP.) (V DS(on)2 Low ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚ FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of ...
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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 10 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = -50 ˚C A -25 ˚C 25 ˚ ˚C 125 ˚C 1 150 ˚C ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 4 100 150 - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN ...
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Data Sheet G13436EJ2V0DS PA1709 ...
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Data Sheet G13436EJ2V0DS PA1709 7 ...
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The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...