upa1706tp Renesas Electronics Corporation., upa1706tp Datasheet

upa1706tp

Manufacturer Part Number

upa1706tp

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1706TP.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

Low on-state resistance

Low C

Small and surface mount package (Power HSOP8)

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

MOS Field Effect Transistor designed for DC/DC converter

and power management application of notebook computer.

FEATURES

Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Total Power Dissipation

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

The PA1706TP which has a heat spreader is N-Channel

DS(on)1

DS(on)2

PART NUMBER

2. PW 10 s, Duty cycle 1%

3. Starting T

G15850EJ1V0DS00 (1st edition)

May 2002 NS CP(K)

PA1706TP

iss

= 7.8 m MAX. (V

= 10.0 m MAX. (V

: C

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

= 3000 pF TYP. (V

Note1

Note2

= 25°C , V

= 25°C )

Note1

Note3

= 25°C )

= 0 V)

= 10 V, I

= 4.5 V, I

Power HSOP8

= 15 V, R

PACKAGE

= 10 V, V

N-CHANNEL POWER MOS FET

= 7.0 A)

= 25°C, A ll terminals are connected.)

= 7.0 A)

= 25 , L = 100 H, V

= 0 V)

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

SWITCHING

D(pulse)

D(DC)1

D(DC)2

DSS

GSS

stg

–55 to + 150

±100

36.1

±20

±28

±17

150

= 20 0 V

PACKAGE DRAWING (Unit: mm)

°C

5.2

4.1 MAX.

0.40

PA1706TP

1.27 TYP.

+0.17

–0.2

2.0 ±0.2

+0.10

–0.05

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.12 M

0.8 ±0.2

1, 2, 3

5, 6, 7, 8, 9 ; Drain

4.4 ±0.15

6.0 ±0.3

Source

Drain

; Source

; Gate

Body

Diode

2001

0.10

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upa1706tp Summary of contents

Page 1

DESCRIPTION The PA1706TP which has a heat spreader is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer. FEATURES Low on-state resistance R = 7.8 m MAX ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 140 160 T - Case Temperature - ˚C C FORWARD BIAS SAFE OPERATING AREA 1000 ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 T = 125˚ 75˚C 25˚C 25˚C 1 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 100 T = 25˚C A 25˚C ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 7 100 120 140 160 -40 -20 T ...

Page 6

Data Sheet G15850EJ1V0DS PA1706TP ...

Page 7

Data Sheet G15850EJ1V0DS PA1706TP 7 ...

Page 8

The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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