upa1721g Renesas Electronics Corporation., upa1721g Datasheet

upa1721g

Manufacturer Part Number

upa1721g

Description

Switching N-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1721G.pdf (8 pages)

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Company:

H&T Electronics

Part Number:

upa1721g-E1-ES

Quantity:

278

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Document No. G13889EJ2V0DS00 (2nd edition)

Date Published April 2001 NS CP(K)

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

The PA1721 is N-Channel MOS Field Effect

Transistor designed for DC/DC converters and power

management applications of notebook computers.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Notes 1. PW

Low on-resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

iss

PA1721G

= 10.5 m

= 14.0 m

= 17.0 m MAX. (V

: C

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

iss

= 2200 pF TYP.

10 s, Duty Cycle

MAX. (V

Note1

= 25°C)

= 0 V)

= 10 V, I

= 4.5 V, I

= 4.0 V, I

Power SOP8

N-CHANNEL POWER MOS FET

PACKAGE

Note2

1 %

The mark ! shows major revised points.

= 5.0 A)

= 25°C, All terminals are connected.)

= 5.0 A)

INDUSTRIAL USE

D(pulse)

DATA SHEET

D(DC)

DSS

GSS

stg

SWITCHING

–55 to +150

x 2.2 mm

MOS FIELD EFFECT TRANSISTOR

±20

±10

±40

150

2.0

°C

5.37 MAX.

PACKAGE DRAWING (Unit : mm)

0.40

1.27

+0.10

–0.05

0.78 MAX.

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1,2,3

5,6,7,8

0.5 ±0.2

6.0 ±0.3

PA1721

4.4

; Source

; Gate

; Drain

Source

Drain

Body

Diode

0.8

0.10

1998,1999

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upa1721g Summary of contents

Page 1

DESCRIPTION The PA1721 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Low on-resistance R = 10.5 m MAX DS(on 14.0 m MAX. ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚ FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) I D(DC) 10 ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 T = 150˚ 75˚C 25˚C 25˚ Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 25˚C A 150˚C 1 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 4 100 150 T - ...

Page 6

Data Sheet G13889EJ2V0DS PA1721 ...

Page 7

Data Sheet G13889EJ2V0DS PA1721 7 ...

Page 8

The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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