upa1723g Renesas Electronics Corporation., upa1723g Datasheet
upa1723g
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upa1723g Summary of contents
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N-CHANNEL POWER MOS FET DESCRIPTION The PA1723 is N-Channel MOS Field Effect Transistor designed for power management switch. FEATURES Low on-state resistance R = 6.7 m MAX 4 DS(on 7.4 m MAX. (V ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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TYPICAL CHARACTERISTICS (T A FORWARD TRANSFER CHARACTERISTICS 100 125˚C A 75˚C 1 25˚C -25˚C 0 Gate to Source Voltage - V GS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 10 8 ...
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FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V = Pulsed T = -25˚ 25˚ 75˚ 125˚ 0.1 0 Drain Current - A ...
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DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 D(pulse) ...
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Data Sheet G14026EJ2V0DS PA1723 ...
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Data Sheet G14026EJ2V0DS PA1723 7 ...
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The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...