upa1755 Renesas Electronics Corporation., upa1755 Datasheet

upa1755

Manufacturer Part Number

upa1755

Description

Switching N-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1755.pdf (8 pages)

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Part Number

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Quantity

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

upa1755G-E1

Manufacturer:

NEC

Quantity:

2 648

Current page: 1 of 8
Download datasheet (94Kb)

Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Notes 1. PW

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (1 unit)

Total Power Dissipation (2 unit)

Channel Temperature

Storage Temperature

DESCRIPTION

Transistor designed for DC/DC converters and power

management applications of notebook computers.

FEATURES

This product is Dual N-channel MOS Field Effect

Dual chip type

Low on-resistance

Low input capacitance C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

PART NUMBER

2. T

PA1755G

G12715EJ2V0DS00 (2nd edition)

May 2001 NS CP(K)

= 32 m

= 45 m

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

= 25 C, Mounted on ceramic substrate of 2000 mm

10 s, Duty cycle

MAX. (V

Note1

iss

= 0)

= 895 pF TYP.

= 10 V, I

= 4.5 V, I

Note2

Power SOP8

N-CHANNEL POWER MOS FET

PACKAGE

1 %

The mark

= 3.5 A)

= 25 °C, All terminals are connected.)

INDUSTRIAL USE

D(pulse)

D(DC)

DSS

GSS

DATA SHEET

stg

SWITCHING

shows major revised points.

–55 to + 150

MOS FIELD EFFECT TRANSISTOR

150

1.7

2.0

7.0

x 1.1 mm

°C

PACKAGE DRAWING (Unit : mm)

5.37 Max.

0.40

1.27

+0.10

–0.05

0.78 Max.

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.12 M

(1/2 Circuit)

7, 8

5, 6

PA1755

0.5 ±0.2

; Source 1

; Gate 1

; Drain 1

; Source 2

; Gate 2

; Drain 2

Source

Drain

6.0 ±0.3

4.4

Body

Diode

0.8

0.10

1998

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upa1755 Summary of contents

Page 1

DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Dual chip type Low on-resistance MAX DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 100 10 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = 50˚ 25˚ 25˚ ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE =4. Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 1000 100 10 0 ...

Page 5

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of ...

Page 6

Data Sheet G12715EJ2V0DS PA1755 ...

Page 7

Data Sheet G12715EJ2V0DS PA1755 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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