upa1758g Renesas Electronics Corporation., upa1758g Datasheet

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upa1758g

Manufacturer Part Number
upa1758g
Description
Switching N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
UPA1758G
Quantity:
104
Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
DESCRIPTION
notebook computers, and Li-ion battery application.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
Notes 1. PW
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of
Dual MOS FET chips in small package
2.5 V gate drive type low on-state resistance
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
2. Mounted on ceramic substrate of 2000 mm
iss
PA1758G
D12911EJ2V0DS00 (2nd edition)
May 2001 NS CP(K)
= 30 m
= 40 m
When this device actually used, an additional protection circuit is externally required if a
voltage exceeding the rated voltage may be applied to this device.
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty cycle
= 1100 pF (TYP.)
(MAX.) (V
(MAX.) (V
Note1
DS
GS
= 0)
GS
GS
= 0)
Note2
Note2
= 4.5 V, I
= 2.5 V, I
Power SOP8
N-CHANNEL POWER MOS FET
PACKAGE
1 %
The mark
A
D
D
= 3.0 A)
= 3.0 A)
= 25 °C)
INDUSTRIAL USE
I
D(pulse)
V
V
I
D(DC)
T
T
P
P
DSS
GSS
DATA SHEET
stg
ch
T
T
SWITCHING
shows major revised points.
–55 to + 150
2
x 1.1 mm
±12.0
±6.0
±24
150
MOS FIELD EFFECT TRANSISTOR
1.7
2.0
30
PACKAGE DRAWING (Unit : mm)
°C
°C
W
W
V
V
A
A
8
1
5.37 Max.
0.40
1.27
+0.10
–0.05
0.78 Max.
5
4
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
0.12 M
1
2
7, 8
3
4
5, 6
0.5 ±0.2
; Source 1
; Gate 1
; Drain 1
; Source 2
; Gate 2
; Drain 2
6.0 ±0.3
Source
Drain
PA1758
4.4
Body
Diode
©
0.8
0.10
1998

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upa1758g Summary of contents

Page 1

DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES Dual MOS FET chips in small package 2.5 V gate drive type low on-state resistance R = ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1 0.1 0.01 0.001 100 10 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = 50˚ 25˚ =25˚ 0.1 ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE V =2. 100 Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 1000 100 10 0 ...

Page 5

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic substrate of ...

Page 6

Data Sheet D12911EJ2V0DS PA1758 ...

Page 7

Data Sheet D12911EJ2V0DS PA1758 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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