upa1759g Renesas Electronics Corporation., upa1759g Datasheet
upa1759g
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upa1759g Summary of contents
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DESCRIPTION The PA1759 is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters. FEATURES Dual chip type Low on-resistance R = 110 m TYP. (V DS(on 170 m TYP. (V DS(on)2 GS Low input capacitance C ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...
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TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 10 I ...
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FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 150˚ 75˚ 25˚ 55˚ Gate ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0.4 Pulsed 100 T - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 2 0.1 0.01 10 100 L - Inductive Load - H 6 120 100 ...
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Data Sheet G13622EJ2V0DS PA1759 7 ...
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The information in this document is current as of June, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...