upa1716g Renesas Electronics Corporation., upa1716g Datasheet
upa1716g
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upa1716g Summary of contents
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DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Low on-resistance R = 12.5 m TYP – DS(on 17.0 m TYP. ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...
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FORWARD TRANSFER CHARACTERISTICS 100 25˚C A 25˚C 75˚C 125˚C 150˚C 1 0.1 1.0 2 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = 50˚C A 25˚C 25˚C ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 100 150 T - Channel Temperature - ˚C ...
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Data Sheet G13727EJ1V0DS00 PA1716 ...
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Data Sheet G13727EJ1V0DS00 PA1716 7 ...
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means ...