upa1818 Renesas Electronics Corporation., upa1818 Datasheet - Page 4

• Manufacturer Part Number: upa1818
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
- 40
- 30
- 20
- 10
- 1.4
- 1.2
- 0.8
- 0.6
- 0.4
30
20
10
0
- 1
-50
0
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
-50
0
I
Pulsed
D
Pulsed
= 5.0 A
T
ch
V
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
– Channel Temperrature - C
- 0.2
ch
0
V
GS
0
- Drain to Source Voltage - V
- Channel Temperature - C
= 2.5 V
V
GS
= 4.5 V
50
- 0.4
50
4.0 V
4.0 V
4.5 V
100
2.5 V
- 0.6
100
V
I
D
DS
= 1.0 mA
= 10 V
Data Sheet G16254EJ1V0DS
150
- 0.8
150
100
30
20
10
- 0.0001
0.1
10
0
- 0.001
1
- 0.01
- 0.01
0
- 100
- 0.1
- 10
DRAIN TO SOURCE ON-STATE RESISTANCE
vs.GATE TO SOURCE VOLTAGE
- 1
V
Pulsed
- 0.5
DS
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
= 10 V
V
-2
V
Pulsed
GS
DS
= 10 V
- 0.1
- Gate to Source Voltage - V
V
GS
I
-4
D
- 1
- Gate to Source Voltage - V
- Drain Current - A
-6
- 1
- 1.5
-8
T
A
T
= 25 C
A
125 C
- 10
= 125 C
25 C
75 C
I
Pulsed
D
-10
PA1818
75 C
25 C
25 C
= 5.0 A
- 2
-12
- 100
- 2.5