upa1809 Renesas Electronics Corporation., upa1809 Datasheet - Page 3

• Manufacturer Part Number: upa1809
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
120
100
0.01
100
80
60
40
20
0.1
10
0
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
0.1
0
FORWARD BIAS SAFE OPERATING AREA
R
(V
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm
DS(on)
GS
= 10 V)
25
Limited
T
V
A
DS
- Ambient Temperature - C
I
D(DC)
- Drain to Source Voltage - V
50
I
D(pulse)
1000
1
100
10
DC
1
1 m
75
2
x 1.1 mm
Single Pulse
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
A
10
125
10 m
= 25°C)
PW = 1 ms
150
100 ms
10 ms
175
100
100 m
Data Sheet G16273EJ1V0DS
PW - Pulse Width - s
1
Mounted on Ceramic
Substrate of 5000 mm
2.5
2.0
1.5
1.0
0.5
0
10
0
62.5 C/W
Mounted on FR-4 board
of 2500 mm
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Mounted on FR-4 board
of 2500 mm
25
T
A
125 C/W
- Ambient Temperature - C
2
2
100
x 1.1 mm
x 1.6 mm
50
2
x 1.6 mm
Mounted on Ceramic
Substrate of 5000 mm
75
1000
100
125
2
x 1.1 mm
150
PA1809
175
3