upa1855 Renesas Electronics Corporation., upa1855 Datasheet - Page 4

• Manufacturer Part Number: upa1855
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

4
30
20
10
50
40
10
20
10
40
30
20
40
30
0
0.01
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
V
V
I
GS
GS
D
= 3.0 A
= 4.5 V
= 2.5 V
2
V
GS
0.1
0.1
- Gate to Source Voltage - V
I
I
D
D
T
T
T
T
A
A
A
A
- Drain Current - A
- Drain Current - A
T
T
T
T
4
A
= -25˚C
A
A
= 125˚C
= 75˚C
= 25˚C
A
= 125˚C
= 75˚C
= 25˚C
= -25˚C
1
6
1
8
10
10
10
Data Sheet D13454EJ2V0DS
100
100
12
10000
1000
100
30
10
10
20
40
30
20
10
- 50
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.1
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
I
D
V
= 3.0 A
GS
= 4.0 V
V
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
ch
0.1
0
- Drain to Source Voltage - V
I
D
- Channel Temperature -˚C
T
T
T
T
A
A
A
- Drain Current - A
A
1
= 125˚C
= 75˚C
= 25˚C
= -25˚C
50
1
10
V
GS
100
10
V
V
= 4.5 V
GS
C
C
C
GS
f = 1 MHz
oss
rss
iss
= 4.0 V
= 2.5 V
PA1855
150
100
100