upa1858 Renesas Electronics Corporation., upa1858 Datasheet - Page 4

• Manufacturer Part Number: upa1858
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
- 20
- 15
- 10
- 1.4
- 1.2
- 0.8
- 0.6
60
50
40
30
20
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0
- 5
- 1
-50
0
-50
0
V
I
Pulsed
D
GS
V
I
= 2.5 A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
D
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
DS
= 4.5 V
V
= 1.0 m A
- 0.2
T
T
DS
= 10 V
ch
ch
0
- Drain to Source Voltage - V
- Channel Temperature - C
- Channel Temperature - C
0
V
GS
- 0.4
= 2.5 V
50
4.0 V
50
- 0.6
100
100
4.5 V
2.5 V
- 0.8
Pulsed
4.0 V
150
Data Sheet G16276EJ1V0DS
- 1
150
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
- 0 .0 0 0 1
100
0.1
10
- 0 .0 0 1
60
50
40
30
20
10
1
- 0.01
- 0 .0 1
- 1 0 0
0
- 0 .1
- 1 0
0
- 1
FORWARD TRANSFER CHARACTERISTICS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
Pulsed
DS
0
= 10 V
- 2
V
V
P u ls ed
V
- 0.1
GS
D S
GS
- Gate to Source Voltage - V
- 0 .5
I
D
- Gate to Source Voltage - V
=
- Drain Current - A
- 4
1 0 V
- 1
- 1
- 6
- 8
- 1 .5
T
- 10
I
Pulsed
A
D
= 125 C
= 2.5 A
T
- 10
PA1858
75 C
25 C
25 C
A
= 1 2 5 C
- 2
- 100
7 5 C
2 5 C
2 5 C
- 12
- 2 .5