upa1854 Renesas Electronics Corporation., upa1854 Datasheet - Page 4

no-image

upa1854

Manufacturer Part Number
upa1854
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
4
120
100
100
20
60
40
80
60
40
20
70
80
60
90
80
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
V
V
GS
GS
= 4.5 V
= 2.5 V
V
GS
2
0.1
0.1
T
- Gate to Source Voltage - V
I
I
T
D
D
A
A
- Drain Current - A
- Drain Current - A
= 125˚C
= 125˚C
25˚C
25˚C
75˚C
25˚C
25˚C
75˚C
4
1
1
6
10
10
I
D
= 1.5 A
8
Data Sheet D13295EJ2V0DS
100
100
10
10000
1000
100
100
30
10
50
90
70
80
60
40
20
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
0.1
50
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
I
D
V
GS
= 1.5 A
= 4.0 V
V
T
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
T
DS
A
ch
= 125˚C
0.1
- Drain to Source Voltage - V
0
I
D
- Channel Temperature -˚C
75˚C
25˚C
25˚C
- Drain Current - A
1
50
1
V
GS
10
= 2.5 V
C
C
C
100
10
oss
iss
rss
4.0 V
f = 1 MHz
4.5 V
PA1854
150
100
100

Related parts for upa1854