upa1874b Renesas Electronics Corporation., upa1874b Datasheet

upa1874b

Manufacturer Part Number

upa1874b

Description

N-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1874B.pdf (7 pages)

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Document No. G16743EJ1V0DS00 (1st edition)

Date Published April 2004 NS CP(K)

Printed in Japan

DESCRIPTION

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine and

so on.

FEATURES

• Built-in G-S protection diode against ESD

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

directly by a 2.5 V power source.

• 2.5 V drive available

• Low on-state resistance

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. Mounted on ceramic board of 50 cm

The

DS(on)1

DS(on)2

DS(on)3

DS(on)4

PART NUMBER

PA1874BGR-9JG

2. PW ≤ 10

PA1874B features a low on-state resistance and

PA1874B is a switching device, which can be driven

= 14.0 mΩ MAX. (V

= 14.5 mΩ MAX. (V

= 16.5 mΩ MAX. (V

= 19.5 mΩ MAX. (V

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Note 1

s, Duty Cycle ≤ 1%

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note 2

Note 1

= 0 V)

= 4.5 V, I

= 4.0 V, I

= 3.1 V, I

= 2.5 V, I

Power TSSOP8

PACKAGE

D(pulse)

D(DC)

DSS

GSS

stg

= 4.0 A)

= 25°C)

FOR SWITCHING

DATA SHEET

x 1.1 mm

–55 to +150

±12.0

±80.0

30.0

±8.0

150

2.0

MOS FIELD EFFECT TRANSISTOR

°C

3.15 ±0.15

3.0 ±0.1

PACKAGE DRAWING (Unit: mm)

0.27

0.65

+0.03

–0.08

Gate1

Gate

Protection

Diode

0.8 MAX.

0.10 M

EQUIVALENT CIRCUIT

2, 3 :Source1

6, 7 :Source2

Source1

Drain1

:Drain1

:Gate1

:Gate2

:Drain2

Body

Diode

PA1874B

1.2 MAX.

Gate2

6.4 ±0.2

4.4 ±0.1

Gate

Protection

Diode

1.0±0.05

0.1±0.05

3°

+5°

–3°

Source2

Drain2

0.5

0.6

1.0 ±0.2

Body

Diode

0.25

0.1

+0.15

–0.1

2004

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upa1874b Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION µ The PA1874B is a switching device, which can be driven directly by a 2.5 V power source. µ The PA1874B features a low on-state resistance and excellent switching characteristics, and is suitable for ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

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upa1874b Renesas Electronics Corporation., upa1874b Datasheet

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