upa1872gr-9jg Renesas Electronics Corporation., upa1872gr-9jg Datasheet

upa1872gr-9jg

Manufacturer Part Number

upa1872gr-9jg

Description

N-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1872GR-9JG.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

driven directly by a 2.5 V power source.

excellent switching characteristics, and is suitable for

applications such as power switch of portable machine

and so on.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation (2 unit)

Channel Temperature

Storage Temperature

Notes 1. PW

The

This device features a low on-state resistance and

2.5 V drive available

Low on-state resistance

Built-in G-S protection diode against ESD

DS(on)1

DS(on)2

DS(on)3

DS(on)4

PART NUMBER

PA1872GR-9JG

2. Mounted on ceramic substrate of 5000 mm

PA1872 is a switching device which can be

G15622EJ1V0DS00 (1st edition)

December 2001 NS CP(K)

= 13.0 m

= 13.5 m

= 15.5 m

= 18.0 m

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

MAX. (V

Note1

= 25°C)

= 0 V)

Note2

Power TSSOP8

= 4.5 V, I

= 4.0 V, I

= 3.1 V, I

= 2.5 V, I

PACKAGE

= 25°C)

= 5.0 A)

FOR SWITCHING

D(pulse)

D(DC)

GSS

DATA SHEET

DSS

stg

–55 to +150

x 1.1 mm

MOS FIELD EFFECT TRANSISTOR

±12

±10

±80

150

2.0

3.15 ±0.15

3.0 ±0.1

0.27

°C

0.65

PACKAGE DRAWING (Unit : mm)

+0.03

–0.08

0.8 MAX.

Gate1

Gate

Protection

Diode

0.10 M

2, 3

6, 7

: Drain1

: Source1

: Gate1

: Gate2

: Source2

: Drain2

Source1

EQUIVALENT CIRCUIT

Drain1

1.2 MAX.

Body

Diode

6.4 ±0.2

4.4 ±0.1

PA1872

1.0±0.05

0.1±0.05

–3

Gate2

Gate

Protection

Diode

0.5

0.6

1.0 ±0.2

0.25

0.1

Source2

+0.15

–0.1

Drain2

2001

Body

Diode

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upa1872gr-9jg Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1872 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 35 Pulsed V = ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 125 ˚ ˚ ˚C 25 ˚ 0.01 0 Drain Current - A D DRAIN ...

Page 5

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 MHz V C 1000 C C 100 10 0 Drain to Source Voltage - V DS SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 ...

Page 6

Data Sheet G15622EJ1V0DS PA1872 ...

Page 7

Data Sheet G15622EJ1V0DS PA1872 7 ...

Page 8

The information in this document is current as of December, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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