upa1872bgr-9jg Renesas Electronics Corporation., upa1872bgr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1872bgr-9jg
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
1000
0.01
120
100
100
0.1
80
60
40
20
10
0
1
0.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
0
I
D(DC)
Single pulse
Mounted on ceramic board of
50 cm
P
R
(at V
D
DS(on)
(FET1) : P
V
25
GS
T
DS
2
Limited
A
x 1.1 mm
= 4.5 V)
- Ambient Temperature - °C
- Drain to Source Voltage - V
1000
50
100
D
0.1
10
(FET2) = 1:1
1
1
1 m
75
Single pulse
P
D
(FET1) : P
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10 m
10
125
A
D
= 25°C)
(FET2) = 1:1
PW = 10 µs
10 ms
100 ms
DC (2units)
100 µs
1 ms
150
Data Sheet G16742EJ1V0DS
100 m
175
100
PW - Pulse Width - s
1
Mounted on ceramic board of
50 cm
2.5
1.5
0.5
Mounted on FR-4 board of
25 cm
2
1
0
10
0
2
x 1.1 mm
2
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
x 1.6 mm
25
T
A
- Ambient Temperature - °C
50
100
Mounted on ceramic board of
50 cm
Mounted on FR-4 board of
25 cm
75
2
x 1.1 mm, 2 units
2
100
1000
x 1.6 mm, 2 units
125
µ
150
PA1872B
175
3