upa1870bgr-9jg Renesas Electronics Corporation., upa1870bgr-9jg Datasheet

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upa1870bgr-9jg

Manufacturer Part Number
upa1870bgr-9jg
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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upa1870bgr-9jg-E1
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Document No. G16741EJ1V0DS00 (1st edition)
Date Published October 2003 NS CP(K)
Printed in Japan
DESCRIPTION
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine and
so on.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
directly by a 2.5 V power source.
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. Mounted on ceramic substrate of 50 cm
The PA1870B features a low on-state resistance and
The PA1870B is a switching device which can be driven
Built-in G-S protection diode against ESD
2.5 V drive available
Low on-state resistance
R
R
R
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
PA1870BGR-9JG
2. PW
= 16.0 m TYP. (V
= 16.5 m TYP. (V
= 20.0 m TYP. (V
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
10 s, Duty Cycle
Note 1
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note 2
Note 1
DS
GS
= 0 V)
GS
GS
GS
= 0 V)
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
Power TSSOP8
1%
PACKAGE
I
D(pulse)
V
I
V
D(DC)
T
T
P
D
D
D
DSS
GSS
stg
ch
T
= 3.0 A)
= 3.0 A)
= 3.0 A)
A
= 25°C)
FOR SWITCHING
DATA SHEET
–55 to +150
2
x 1.1 mm
±12.0
±80.0
20.0
±6.0
150
2.0
MOS FIELD EFFECT TRANSISTOR
°C
°C
W
V
V
A
A
8
1
3.15 ±0.15
3.0 ±0.1
PACKAGE DRAWING (Unit: mm)
0.27
0.65
+0.03
–0.08
Gate1
Gate
Protection
Diode
5
4
0.8 MAX.
0.10 M
EQUIVALENT CIRCUIT
1
2, 3 :Source1
4
5
6, 7 :Source2
8
Source1
Drain1
:Drain1
:Gate1
:Gate2
:Drain2
Body
Diode
PA1870B
1.2 MAX.
Gate2
6.4 ±0.2
4.4 ±0.1
Gate
Protection
Diode
1.0±0.05
0.1±0.05
3
+5
–3
Source2
Drain2
0.5
0.6
1.0 ±0.2
Body
Diode
0.25
0.1
+0.15
–0.1
2003

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upa1870bgr-9jg Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1870B is a switching device which can be driven directly by a 2.5 V power source. The PA1870B features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 1000 R Limited ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 Pulsed 0.1 0.2 0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 2 Pulsed 125°C A 75°C 25°C 30 25° 0.01 0 Drain Current - A D DRAIN TO ...

Page 6

SOURCE TO DRAIN FORWARD VOLTAGE 100 Pulsed 10 1 0.1 0.01 0.4 0.6 0 Source to Drain Voltage - V F(S-D) 6 1.0 1.2 Data Sheet G16741EJ1V0DS PA1870B ...

Page 7

The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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