upa1911 Renesas Electronics Corporation., upa1911 Datasheet

upa1911

Manufacturer Part Number

upa1911

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1911.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

directly by a 2.5

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

The

The PA1911 features a low on-state resistance and excellent

Can be driven by a 2.5

Low on-state resistance

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on FR-4 board, t

PA1911 is a switching device which can be driven

PA1911TE

D13455EJ2V0DS00 (2nd edition)

May 2001 NS CP(K)

= 115 m

= 120 m

= 190 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

V power source.

10 s, Duty Cycle

MAX. (V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

Note2

V power source

6-pin Mini Mold (Thin Type)

= –4.5 V, I

= –4.0 V, I

= –2.5 V, I

1 %

PACKAGE

5 sec.

The mark

= 25°C)

= –1.5 A)

= –1.0A)

FOR SWITCHING

D(pulse)

D(DC)

DSS

GSS

stg

DATA SHEET

shows major revised points.

–55 to +150

–12/+6

–20

150

MOS FIELD EFFECT TRANSISTOR

0.2

2.5

°C

0.32

+0.1

–0.05

PACKAGE DRAWING (Unit : mm)

0.95

2.9 ±0.2

1.9

0.95

EQUIVALENT CIRCUIT

Gate

Protection

Diode

Marking: TC

1, 2, 5, 6 : Drain

PA1911

: Gate

: Source

Source

Drain

0.9 to 1.1

0.65

Body

Diode

0.16

1998, 1999

0 to 0.1

+0.1

–0.06

Related parts for upa1911

upa1911 Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1911 is a switching device which can be driven directly by a 2.5 V power source. - The PA1911 features a low on-state resistance and excellent switching characteristics, and is suitable for applications ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T = 25°C) A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 Ambient Temperature - ˚C A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE Vs. DRAIN CURRENT 350 300 250 200 T = 125 ˚ ˚C 150 25 ˚C 25 ˚C 100 50 0 0.1 0. Drain Current - A ...

Page 5

SWITCHING CHARACTERISTICS 10000 1000 100 4 0 Drain Current - A D DYNAMIC INPUT CHARACTERISTICS 2.5 A ...

Page 6

Data Sheet D13455EJ2V0DS PA1911 ...

Page 7

Data Sheet D13455EJ2V0DS PA1911 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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