upa1917 Renesas Electronics Corporation., upa1917 Datasheet

upa1917

Manufacturer Part Number

upa1917

Description

P-channel Mos Field Effect Transistor For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1917.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

Marking : TR

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

directly by a 1.8 V power source.

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) (T

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Notes 1. PW

The PA1917 is a switching device which can be driven

This device features a low on-state resistance and excellent

1.8 V drive available

Low on-state resistance

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on FR-4 board, t

PA1917TE

G15925EJ1V0DS00 (1st edition)

June 2002 NS CP(K)

= 70 m

= 53 m

= 107 m

The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

MAX. (V

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

Note1

= 25°C)

Note2

= 0 V)

SC-95 (Mini Mold Thin Type)

= –2.5 V, I

= –4.5 V, I

= –1.8 V, I

PACKAGE

5 sec.

= 25°C)

= –3.0 A)

= –1.5 A)

FOR SWITCHING

D(pulse)

D(DC)

GSS

DSS

stg

DATA SHEET

–55 to +150

m8.0

m6.0

MOS FIELD EFFECT TRANSISTOR

–20

m24

150

0.2

2.0

°C

0.32

+0.1

–0.05

PACKAGE DRAWING (Unit : mm)

0.95

2.9 ±0.2

1.9

0.95

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1, 2, 5, 6 : Drain

PA1917

: Gate

: Source

Source

Drain

0.9 to 1.1

0.65

Body

Diode

0.16

0 to 0.1

+0.1

–0.06

2002

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upa1917 Summary of contents

Page 1

P-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION The PA1917 is a switching device which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T = 25°C) A DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 100 ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 20 Pulsed - 1 -0.2 -0.4 -0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 140 Pulsed 120 100 T = 125 -0.01 -0 Drain Current - ...

Page 6

SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 1 0.1 0.01 0.4 0.6 0 Source to Drain Voltage - V F(S-D) 6 Pulsed 1.4 1.6 Data Sheet G15925EJ1V0DS PA1917 ...

Page 7

Data Sheet G15925EJ1V0DS PA1917 7 ...

Page 8

The information in this document is current as of June, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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