upa1902 Renesas Electronics Corporation., upa1902 Datasheet

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upa1902

Manufacturer Part Number
upa1902
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1902.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
upa1902TE-T1
Manufacturer:
NEC
Quantity:
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Company:
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Part Number:
upa1902TE-T1
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Quantity:
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Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
upa1902TE-T1-AT
Manufacturer:
RENESAS/瑞萨
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Company:
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Part Number:
upa1902TE-T2
Manufacturer:
NEC
Quantity:
69 000
Document No. G16634EJ1V0DS00 (1st edition)
Date Published October 2003 NS CP(K)
Printed in Japan
ORDERING INFORMATION
Marking: TY
ABSOLUTE MAXIMUM RATINGS (T
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
DESCRIPTION
directly by a 4.5 V power source.
switching characteristics, and is suitable for applications such as
power management switch of portable machine and so on.
FEATURES
• 4.5 V drive available
• Low on-state resistance
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW ≤ 10
The
This
R
R
DS(on)1
DS(on)2
µ
PART NUMBER
µ
2. Mounted on FR-4 board of 50 mm x 50 mm x 1.6 mm, t ≤ 5 sec.
PA1902 is a switching device, which can be driven
µ
PA1902 features a low on-state resistance and excellent
PA1902TE
= 17 mΩ TYP. (V
= 22 mΩ TYP. (V
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
caution for electrostatic discharge. (It does not have built-in G-S protection diode.)
When this product actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
µ
s, Duty Cycle ≤ 1%
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
Note2
DS
GS
GS
GS
= 0 V)
= 10 V, I
= 4.5 V, I
= 0 V)
SC-95 (Mini Mold Thin Type)
D
PACKAGE
D
= 3.5 A)
= 3.5 A)
I
A
I
D(pulse)
V
V
D(DC)
P
P
T
T
= 25°C)
DSS
GSS
FOR SWITCHING
stg
T1
T2
ch
DATA SHEET
−55 to +150
MOS FIELD EFFECT TRANSISTOR
±
±
±
150
0.2
2.0
30
7.0
20
28
0.32
°C
°C
W
W
V
V
A
A
+0.1
–0.05
PACKAGE DRAWING (Unit: mm)
6
1
0.95
2.9 ±0.2
1.9
EQUIVALENT CIRCUIT
Gate
5
2
0.95
µ
4
3
PA1902
Source
Drain
0.9 to 1.1
1, 2, 5, 6: Drain
3
4
Body
Diode
0.65
0.16
: Gate
: Source
0 to 0.1
2003
+0.1
–0.06

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upa1902 Summary of contents

Page 1

N-CHANNEL MOS FIELD EFFECT TRANSISTOR DESCRIPTION µ The PA1902 is a switching device, which can be driven directly by a 4.5 V power source. µ This PA1902 features a low on-state resistance and excellent switching characteristics, and is suitable for ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - °C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 Pulsed 4 0.1 0.2 0.3 0 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2.4 V ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 80 Pulsed 3 Gate to Source Voltage - V GS CAPACITANCE vs. DRAIN TO SOURCE ...

Page 6

The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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