upa1950 Renesas Electronics Corporation., upa1950 Datasheet - Page 5

• Manufacturer Part Number: upa1950
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

0.01
100
0.1
1000
10
-0.4
100
1
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
0.1
V
F(S-D)
V
-0.6
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
- Drain to Source Voltage - V
- Source to Drain Voltage - V
1000
100
0.001
10
1
1
50 cm
Single Pulse
Mounted on FR-4 Board of
-0.8
2
x 1.1 mm
10
0.01
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
-1.0
C
C
C
rss
iss
oss
f = 1 MHz
V
GS
= 0 V
-1.2
Data Sheet G15620EJ2V0DS
100
0.1
PW - Pulse Width - s
1
1000
100
5
4
3
2
1
0
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
0
1
10
0.1
I
V
R
D
V
= 2.5 A
DD
GS(on)
G
P
P
= 10
D
D
= 6.0 V
(FET1) : P
0.4
(FET1) : P
SWITCHING CHARACTERISTICS
= 4.0 V
t
t
t
d(off)
t
Q
d(on)
f
r
G
I
D
100
- Gate Charge - nC
- Drain Current - A
D
D
0.8
(FET2) = 1:0
(FET2) = 1:1
V
DD
1.0
= 10 V
1.2
1000
6 V
1.6
PA1950
2.0
10
5