upa1930 Renesas Electronics Corporation., upa1930 Datasheet

upa1930

Manufacturer Part Number

upa1930

Description

P-channel Mosfet For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1930.pdf (6 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

upa1930TE-T1

Manufacturer:

NEC

Quantity:

42 000

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Document No. G18030EJ1V0DS00 (1st edition)

Date Published April 2006 NS CP(K)

Printed in Japan

DESCRIPTION

switch of portable machine and so on.

FEATURES

−4.5 V drive available

ORDERING INFORMATION

Remark "-A" indicates Pb-free (This product does not contain

Marking : UA

ABSOLUTE MAXIMUM RATINGS (T

Notes 1. Mounted on FR-4 Board 2500 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

The

DS(on)1

DS(on)2

PA1930TE-T1-A

PA1930TE-T2-A

PART NUMBER

PA1930 is a P-channel MOSFET designed for power

2. PW ≤ 10

= 77 mΩ MAX. (V

= 100 mΩ MAX. (V

Pb in external electrode and other parts).

"-T1", "-T2" indicates the unit orientation (8 mm embossed

carrier tape, 3,000 pcs/reel).

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

electrostatic discharge. V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Note1

s, Duty Cycle ≤ 1%

Note2

Note1

= −10 V, I

SC-95 (Mini Mold Thin Type)

= 0V)

= −4.5 V, I

= 0V)

ESD

PACKAGE

± 150 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)

= −2.5 A)

= 25°C)

P-CHANNEL MOSFET

D(pulse)

× 1.6 mm, t ≤ 5 sec

D(DC)

GSS

DSS

stg

FOR SWITCHING

DATA SHEET

−55 to +150

m4.5

−30

m20

m18

150

0.2

2.0

MOS FIELD EFFECT TRANSISTOR

°C

0.32

+0.1

–0.05

PACKAGE DRAWING (Unit : mm)

0.95

EQUIVALENT CIRCUIT

2.9 ±0.2

Gate

Protection

Diode

1.9

0.95

PA1930

1, 2, 5, 6 : Drain

Source

Drain

: Gate

: Source

0.9 to 1.1

Body

Diode

0.65

2006

0.16

0 to 0.1

+0.1

–0.06

Related parts for upa1930

upa1930 Summary of contents

Page 1

DESCRIPTION μ The PA1930 is a P-channel MOSFET designed for power switch of portable machine and so on. FEATURES −4.5 V drive available = − mΩ MAX. (V DS(on −4 ...

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

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upa1930 Renesas Electronics Corporation., upa1930 Datasheet

upa1930

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