upa1520b Renesas Electronics Corporation., upa1520b Datasheet

no-image

upa1520b

Manufacturer Part Number
upa1520b
Description
N-channel Power Mos Fet Array Switching Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upa1520bH
Manufacturer:
NEC
Quantity:
20 000
Document No. G10598EJ2V0DS00 (2nd edition)
Date Published December 1995 P
Printed in Japan
DESCRIPTION
built in 4 circuits designed for solenoid, motor and lamp
driver.
FEATURES
• 4 V driving is possible
• Large Current and Low On-state Resistance
• Low Input Capacitance Ciss = 220 pF TYP.
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
I
R
R
The PA1520B is N-channel Power MOS FET Array that
D (DC)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. V
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DS (on)
DS (on)
Type Number
PA1520BH
= 2.0 A
1
1
3. PW
3. 4 circuits, T
0.17
0.25
GS
= 0
10 s, Duty Cycle
MAX. (V
MAX. (V
10 Pin SIP
Package
A
= 25 C
N-CHANNEL POWER MOS FET ARRAY
GS
GS
V
V
ID
ID
P
P
T
T
CH
stg
DSS
GSS
T1
T2
(DC)
(pulse)
= 10 V, I
= 4 V, I
Note 4
Note 5
Note 1
Note 2
Note 3
Compound Field Effect Power Transistor
D
1 %
D
= 1 A)
DATA SHEET
–55 to +150
= 1 A)
SWITCHING USE
A
= 25 C)
150
3.5
30
28
2.0
8.0
20
2. V
4. 4 circuits, T
A/unit
A/unit
DS
W
W
V
V
C
C
= 0
1
2
C
= 25 C
ELECTRODE CONNECTION
2, 4, 6, 8
3, 5, 7, 9
1, 10
3
1.4 0.6±0.1
1
PACKAGE DIMENSIONS
CONNECTION DIAGRAM
2 3 4 5 6 7 8 9
26.8 MAX.
4
: Gate
: Drain
: Source
in millimeters
5
PA1520B
10
6
2.54
7
8
4.0
©
9
0.5±0.1
1.4
10
1995

Related parts for upa1520b

upa1520b Summary of contents

Page 1

N-CHANNEL POWER MOS FET ARRAY DESCRIPTION The PA1520B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • driving is possible • Large Current and Low On-state Resistance ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Drain Leakage Current I DSS Gate Leakage Current I GSS Gate Cutoff Voltage V GS(off) Forward Transfer Admittance | Y fs Drain to Source On-State Resistance R DS(on)1 R DS(on)2 Input Capacitance C iss Output ...

Page 3

CHARACTERISTICS ( TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 6 Under same NEC dissipation in PA1520BH Laed each circuit 5 Print 4 Circuits operation Circuit Boad 3 Circuits operation 4 2 Circuits operation 1 Circuit operation 3 ...

Page 4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 Single Pulse. For each Circuit 100 10 1.0 0 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 125 C 1.0 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 V 150 V GS 100 100 T - Channel Temperature - C CH CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000 V GS ...

Page 6

REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Semiconductor device package manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Power MOS FET features and application ...

Page 7

PA1520B 7 ...

Page 8

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...

Related keywords