upa1523b Renesas Electronics Corporation., upa1523b Datasheet
upa1523b
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upa1523b Summary of contents
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COMPOUND FIELD EFFECT POWER TRANSISTOR P-CHANNEL POWER MOS FET ARRAY DESCRIPTION The PA1523B is P-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES • Full Mold Package with 4 Circuits • ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Drain Leakage Current I DSS Gate Leakage Current I GSS Gate Cutoff Voltage V GS(off) Forward Transfer Admittance | Drain to Source ON-Resistance R DS(on)1 Drain to Source ON-Resistance R DS(on)2 Input ...
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Test Circuit 1 Avalanche Capability V = – Test Circuit 2 Switching Time D.U. PG Duty cycle 1 % Test Circuit 3 Gate Charge ...
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TYPICAL CHARACTERISTICS (T A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3.5 Under Same dissipation in 3.0 each circuit 2.5 4 Circuits operation 3 Circuits operation 2.0 2 Circuits operation 1.5 1 Circuit operation 1.0 NEC PA1523BH Lead Print 0.5 Circuit ...
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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 100 10 1.0 0.1 100 1 m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V DS Pulsed –25 ˚ ˚C 75 ˚C 125 ˚C 1.0 0.1 –0.01 ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 1600 1200 V = – 800 V = – 400 0 –50 0 100 Channel Temperature - ˚C CH CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD – – –1.0 –0 – – Starting ˚C CH –0.1 10 100 1 m ...
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...