upa1572bh Renesas Electronics Corporation., upa1572bh Datasheet

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upa1572bh

Manufacturer Part Number
upa1572bh
Description
N-channel Power Mos Fet Array Switching Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. G11177EJ1V0DS00 (1st edition)
Date Published May 1996 P
Printed in Japan
DESCRIPTION
that built in 4 circuits designed for solenoid, motor and
lamp driver.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Full Mold Package with 4 Circuits
4 V driving is possible
Low On-state Resistance
R
R
Low Input Capacitance Ciss = 110 pF TYP.
The PA1572B is N-channel Power MOS FET Array
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Tempreature
Single Avalanche Current
Single Avalanche Energy
*1 PW
*3 4 Circuits T
DS(on)
DS(on)
Type Number
PA1572BH
= 0.6
= 0.8
10 s, Duty Cycle
A
MAX. (V
MAX. (V
= 25 C
In case high voltage over V
Build-in Gate Diodes are for protection from static electricity in handing.
GS
GS
10Pin SIP
Package
= 10 V, I
= 4 V, I
DS
The information in this document is subject to change without notice.
GS
N-CHANNEL POWER MOS FET ARRAY
= 0)
= 0)
1 % *2 4 Circuits T
D
D
= 1 A)
V
V
I
I
P
P
T
T
I
E
*4 Starting T
= 1 A)
D (DS)
D (pulse)
AS
CH
stg
DSS
GSS (AC)
T1
T2
AS
A
*4
*2
*3
*4
= 25 C)
INDUSTRIAL USE
*1
Compound Field Effect Power Transistor
DATA SHEET
GSs
55 to +150 C
SWITCHING
150
is applied, please append gate protection circuits.
3.0
5.0
0.1
60
20
CH
2.0 A/unit
6.0 A/unit
20
C
= 25 C, V
= 25 C
mJ
W
W
V
V
A
C
DD
= 30 V, V
2
1
3
1.4
1 2 3 4 5 6 7 8 910
GS
CONNECTION DIAGRAM
PACKAGE DIMENSIONS
26.8 MAX.
4
0.6±0.1
= 20 V
in millimeters
5
0, R
6
ELECTRODE CONNECTION
2, 4, 6, 8
3, 5, 7, 9
1, 10
PA1572B
2.54
G
= 25
7
: Gate
: Drain
: Source
8
4.0
, L = 100 H
©
1.4
0.5±0.1
9
10
1996

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upa1572bh Summary of contents

Page 1

N-CHANNEL POWER MOS FET ARRAY DESCRIPTION The PA1572B is N-channel Power MOS FET Array that built in 4 circuits designed for solenoid, motor and lamp driver. FEATURES Full Mold Package with 4 Circuits 4 V driving is possible Low On-state ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Drain Leakage Current Gate Leakage Current Gate Cutoff Voltage V Forward Transfer Admittance Drain to Source ON-Resistance R DS (on)1 Drain to Sourse ON-Resistance R DS (on)2 Input Capacitance Output Capacitance C Reverse Transfer Capacitance ...

Page 3

Test Circuit 1 Avalanche Capability PG Test Circuit 2 Switching Time D.U. PG Duty Cycle 1 % Test Circuit ...

Page 4

CHARACTERISTICS ( TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 3.5 3.0 2.5 4 Circuits operation 3 Circuits operation 2.0 2 Circuits operation 1.5 1 Circuit operation 1.0 NEC PA1572BH Lead 0.5 Print Circuit Boad 0 50 100 ...

Page 5

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 10 000 1 000 100 10 1.0 0 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 V =10V DS Pulsed T =- 125 C ...

Page 6

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0 100 T - Channel Temperature - C CH CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 000 ...

Page 7

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 10 I =1A AS 1.0 0 Starting T = 0.1 10 100 Inductive ...

Page 8

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...

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