upa1500b Renesas Electronics Corporation., upa1500b Datasheet
upa1500b
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upa1500b Summary of contents
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COMPOUND FIELD EFFECT POWER TRANSISTOR N-CHANNEL POWER MOS FET ARRAY DESCRIPTION The PA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver. FEATURES • driving is ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Drain Leakage Current I DSS Gate Leakage Current I GSS Gate Cutoff Voltage V GS(off) Forward Transfer Admittance | Drain to Source On-State R DS(on)1 Resistance R DS(on)2 Input Capacitance C iss ...
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TYPICAL CHARACTERISTICS (T TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 6 Under same NEC dissipation in PA1500BH Laed each circuit 5 Print Circuit 4 Circuits operation Boad 4 3 Circuits operation 2 Circuits operation 3 1 Circuit operation ...
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TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 Single Pulse. For each Circuit 100 10 1.0 0 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V Pulsed T = -25 ˚ ˚C 75 ˚C 125 ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 300 200 100 –50 0 100 Channel Temperature -˚C CH CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE ...
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SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 1 Starting ˚C CH 0.1 10 100 ...
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PA1500B 7 ...
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No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...