upa1453 Renesas Electronics Corporation., upa1453 Datasheet

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upa1453

Manufacturer Part Number
upa1453
Description
Pnp Silicon Power Transistor Array High Speed Switching Use Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. IC-3519
Date Published September 1994 P
Printed in Japan
(O. D. No. IC-6339)
DESCRIPTION
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
ORDERING INFORMATION
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
* PW
** 4 Circuits, T
*** 4 Circuits, T
Part Number
The PA1453 is PNP silicon epitaxial Power Transistor
Easy mount by 0.1 inch of terminal interval.
High h
h
V
FE
CE(sat)
PA1453H
= 100 to 400 (at I
FE
= –0.3 V MAX. (at I
300 s, Duty Cycle
. Low V
a
c
= 25 ˚C
CE(sat)
= 25 ˚C
PNP SILICON POWER TRANSISTOR ARRAY
10 Pin SIP
Package
C
.
= –2 A)
The information in this document is subject to change without notice.
C
= –2 A)
10 %
HIGH SPEED SWITCHING USE
V
V
V
I
I
I
P
P
T
T
C(DC)
C(pulse)
B(DC)
T1
T2
j
stg
CBO
CEO
EBO
**
***
–55 to +150 ˚C
* –10
Quality Grade
DATA SHEET
INDUSTRIAL USE
–1.0
150
Standard
–60
–60
3.5
28
–7
–5
a
= 25 ˚C)
A/unit
A/unit
A/unit
W
W
˚C
V
V
V
SILICON TRANSISTOR ARRAY
2
1
1.4
1 2 3 4 5 6 7 8 9 10
3
26.8 MAX.
0.6 ±0.1
CONNECTION DIAGRAM
4
PACKAGE DIMENSION
2, 4, 6, 8
3, 5, 7, 9
1, 10
(in millimeters)
5
PIN No.
: Base (B)
: Collector (C)
: Emitter (E)
6
2.54
PA1453
7
4.0
8
©
0.5 ±0.1
1.4
9
10
1994

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upa1453 Summary of contents

Page 1

PNP SILICON POWER TRANSISTOR ARRAY DESCRIPTION The PA1453 is PNP silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Easy mount by 0.1 inch of terminal interval. • ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector Leakage Current I CBO Emitter Leakage Current I EBO DC Current Gain h FE1 DC Current Gain h FE2 DC Current Gain h FE3 Collector Saturation Voltage V CE(sat) Base Saturation Voltage V BE(sat) ...

Page 3

TYPICAL CHARACTERISTICS (T a DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Ambient Temperature - ˚C a TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1453 4 4 Circuits Operation 3 Circuits Operation ...

Page 4

TRANSIENT THERMAL RESISTANCE 100 0 Pulse Width - ms COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE –1.0 –0.8 –0.6 –0.4 –0.2 0 –10 –20 – Collector to Emitter Voltage - V ...

Page 5

REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1453 Document No. TEI-1202 IEI-1209 IEI-1207 ...

Page 6

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...

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