upa1454 Renesas Electronics Corporation., upa1454 Datasheet

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upa1454

Manufacturer Part Number
upa1454
Description
Npn Silicon Power Transistor Array Low Speed Switching Use Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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upa1454H
Manufacturer:
NEC
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Part Number:
upa1454H
Manufacturer:
NEC
Quantity:
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Document No. IC-3520
Date Published September 1994 P
Printed in Japan
DESCRIPTION
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
ORDERING INFORMATION
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
* PW
** 4 Circuits, T
*** 4 Circuits, T
Part Number
The PA1454 is NPN silicon epitaxial Power Transistor
Easy mount by 0.1 inch of terminal interval.
High h
h
V
FE
CE(sat)
PA1454H
= 800 to 3200 (at I
FE
= 1.0 V MAX. (at I
300 s, Duty Cycle
. Low V
a
c
= 25 ˚C
CE(sat)
= 25 ˚C
NPN SILICON POWER TRANSISTOR ARRAY
10 Pin SIP
Package
.
The information in this document is subject to change without notice.
C
= 1 A)
C
= 3 A)
10 %
LOW SPEED SWITCHING USE
V
V
V
I
I
I
P
P
T
T
C(DC)
C(pulse)
B(DC)
T1
T2
j
stg
CBO
CEO
EBO
**
***
–55 to +150 ˚C
*
Quality Grade
DATA SHEET
INDUSTRIAL USE
100
100
150
Standard
1.0
3.5
10
28
7
5
a
= 25 ˚C)
A/unit
A/unit
A/unit
W
W
˚C
V
V
V
SILICON TRANSISTOR ARRAY
1
2
1.4
1 2 3 4 5 6 7 8 9 10
26.8 MAX.
0.6 ±0.1
3
CONNECTION DIAGRAM
PACKAGE DIMENSION
4
2, 4, 6, 8
3, 5, 7, 9
1, 10
(in millimeters)
5
PIN No.
: Base (B)
: Collector (C)
: Emitter (E)
6
2.54
7
PA1454
8
4.0
©
9
0.5 ±0.1
1.4
10
1994

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upa1454 Summary of contents

Page 1

NPN SILICON POWER TRANSISTOR ARRAY DESCRIPTION The PA1454 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Easy mount by 0.1 inch of terminal interval. • ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector Leakage Current I CBO Emitter Leakage Current I EBO DC Current Gain h FE1 DC Current Gain h FE2 Collector Saturation Voltage V CE(sat) Base Saturation Voltage V BE(sat) Turn On Time t on ...

Page 3

TYPICAL CHARACTERISTICS (T a DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Case Temperature - ˚C C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1454 4 4 Circuits Operation 3 Circuits Operation ...

Page 4

TRANSIENT THERMAL RESISTANCE 100 0 Pulse Width - ms 4 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100 PA1454 I = ...

Page 5

REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1454 Document No. TEI-1202 IEI-1209 IEI-1207 ...

Page 6

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...

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