upa1428a Renesas Electronics Corporation., upa1428a Datasheet

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upa1428a

Manufacturer Part Number
upa1428a
Description
Npn Silicon Power Transistor Array High Speed Switching Use Darlington Transistor Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. IC-3479
Date Published September 1994 P
Printed in Japan
(O.D. No. IC-8359)
DESCRIPTION
Transistor Array that built in Surge Absorber 4 circuits
designed for driving solenoid, relay, lamp and so on.
FEATURES
ORDERING INFORMATION
Please refer to “Quality grade on NEC Semiconductor
Device” (Document number IEI-1209) published by NEC
Corporation to know the specification of quality grade on
the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (T
Collector to Base Voltage
Collector to Emitter Voltage V
Emitter to Base Voltage
Surge Sustaining Energy
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
* PW
** 4 Circuits, T
*** 4 Cuircuits, T
Part Number
The PA1428A is NPN silicon epitaxial Darlington Power
Surge Absorber built in.
Easy mount by 0.1 inch of terminal interval.
High h
PA1428AH
FE
HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
350 s, Duty Cycle
for Darlington Transistor.
a
= 25 ˚C
c
= 25 ˚C
NPN SILICON POWER TRANSISTOR ARRAY
10 Pin SIP
Package
The information in this document is subject to change without notice.
2 %
V
V
E
I
I
I
P
P
T
T
C(DC)
C(pulse)
B(DC)
CEO(sus)
T1
T2
j
stg
CBO
CEO
EBO
**
***
–55 to +150 ˚C
*
Quality Grade
60 10
60 10
DATA SHEET
a
INDUSTRIAL USE
150
Standard
0.2
3.5
30
28
= 25 ˚C)
8
2
3
mJ/unit
A/unit
A/unit
A/unit
W
W
˚C
V
V
V
SILICON TRANSISTOR ARRAY
2
1
1.4
1
2 3 4 5 6 7 8 910
3
(B)
0.6 ±0.2
26.8 MAX.
CONNECTION DIAGRAM
PACKAGE DIMENSION
4
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
R
R
1
2
(in millimeters)
. .
= 10 k
. .
= 900
1, 10: Emitter (E)
5
R
1
PIN NO.
6
R
PA1428A
2.54
2
(C)
(E)
7
8
4.0
©
9
0.5 ±0.2
1.4
10
1994

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upa1428a Summary of contents

Page 1

NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE (DARLINGTON TRANSISTOR) DESCRIPTION The PA1428A is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Collector Leakage Current I CBO Emitter Leakage Current I EBO Collector to Emitter V CEO(sus) Sustaining Voltage DC Current Gain h FE1 DC Current Gain h FE2 Collector Saturation Voltage V CE(sat) Base Saturation Voltage ...

Page 3

TYPICAL CHARACTERISTICS ( ˚C) a DERATING CURVE OF SAFE OPERATING AREA 100 100 T - Case Temperature - ˚C C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE NEC PA1428A 4 4 Circuits Operation ...

Page 4

COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 1000 C B Pulsed T = –25 ˚ ˚C 75 ˚C 125 ˚C 1 0.1 0 Collector Current - A C SWITCHING TIME vs. COLLECTOR ...

Page 5

REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. PA1428A Document No. TEI-1202 IEI-1209 IEI-1207 ...

Page 6

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. ...

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