k6x4008t1f-gb85 Samsung Semiconductor, Inc., k6x4008t1f-gb85 Datasheet - Page 2

• Manufacturer Part Number: k6x4008t1f-gb85
• Description: 512kx8 Bit Low Power And Low Voltage Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6X4008T1F Family
FEATURES
PRODUCT FAMILY
1. This parameter is measured in the voltage range of 3.0V~3.6V with 30pF test load.
2. This parameter is measured with 30pF test load.
512K 8 bit Low Power and Low Voltage CMOS Static RAM
VCC
PIN DESCRIPTION
VSS
I/O1
I/O2
I/O3
A13
A18
A14
A18
A16
A14
A12
A11
A17
A15
A16
A12
A
Product Family Operating Temperature
WE
K6X4008T1F-Q
K6X4008T1F-B
Name
K6X4008T1F-F
A9
A7
A6
A5
A4
Process Technology: Full CMOS
Organization: 512K 8
Power Supply Voltage: 2.7~3.6V
Low Data Retention Voltage: 2V(Min)
Three State Outputs
Package Type: 32-SOP-525, 32-TSOP2-400F/R
A7
A6
A5
A4
A3
A2
A1
A0
A8
0
WE
CS
OE
~A
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
18
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP2
Function
Address Inputs
Write Enable Input
Chip Select Input
Output Enable Input
(Forward)
32-SOP
32-TSOP1-0813.4F
32-
(Forward)
Automotive(-40~125 C)
S
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Commercial(0~70 C)
Industrial(-40~85 C)
TSOP1
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VCC
I/O
I/O8
I/O7
I/O6
I/O5
I/O4
A15
A17
A13
A11
A10
WE
OE
CS
A8
A9
Name
Vcc
Vss
1
~I/O
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
8
32-TSOP2
(Reverse)
OE
A10
CS
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
Ground
Function
Power
Data Inputs/Outputs
2.7~3.6V
Range
Vcc
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
55
70
1)
Speed
/70
2)
/85ns
2)
/85ns
GENERAL DESCRIPTION
advanced full CMOS process technology. The families support
various operating temperature range and have various pack-
age types for user flexibility of system design. The families also
support low data retention voltage for battery back-up operation
with low data retention current.
FUNCTIONAL BLOCK DIAGRAM
2
The K6X4008T1F families are fabricated by SAMSUNG s
I/O
I/O
Row
Addresses
CS
WE
OE
(I
1
8
Standby
SB1
Power Dissipation
10 A
10 A
20 A
, Max)
Control
logic
Clk gen.
(I
Operating
CC2
25mA
Data
cont
Data
cont
Row
select
, Max)
32-SOP-525, 32-TSOP1-0813.4F
32-SOP-525, 32-TSOP1-0813.4F
Column Addresses
Precharge circuit.
CMOS SRAM
Memory array
Column select
32-TSOP2-400F/R
32-TSOP2-400F
I/O Circuit
PKG Type
September 2003
Revision 1.0