k6x4008t1f-gb85 Samsung Semiconductor, Inc., k6x4008t1f-gb85 Datasheet - Page 6

• Manufacturer Part Number: k6x4008t1f-gb85
• Description: 512kx8 Bit Low Power And Low Voltage Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6X4008T1F Family
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1)
TIMING WAVEFORM OF READ CYCLE(2)
Address
Data Out
NOTES (READ CYCLE)
1.
2. At any given temperature and voltage condition,
Address
CS
OE
Data out
t
levels.
interconnection.
HZ
and
t
OHZ
are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage
Previous Data Valid
High-Z
t
LZ
t
t
OLZ
t
HZ
(Address Controlled
(WE=V
OH
(Max.) is less than
t
AA
t
CO1
IH
t
)
OE
t
AA
6
,
t
RC
CS=OE=V
t
t
RC
LZ
(Min.) both for a given device and from device to device
IL
, WE=V
Data Valid
IH
)
Data Valid
t
t
OHZ
OH
t
CMOS SRAM
HZ
September 2003
Revision 1.0