k6x4008t1f-gb85 Samsung Semiconductor, Inc., k6x4008t1f-gb85 Datasheet - Page 4

• Manufacturer Part Number: k6x4008t1f-gb85
• Description: 512kx8 Bit Low Power And Low Voltage Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

K6X4008T1F Family
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product: T
2. Overshoot: V
3. Undershoot: -2.0V in case of pulse width
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
Automotive Product: T
Industrial Product: T
Item
CC
Item
+2.0V in case of pulse width
Item
A
=-40 to 85 C, otherwise specified
A
A
=-40 to 125 C, otherwise specified
1)
=0 to 70 C, otherwise specified
(f=1MHz, T
Symbol
A
I
I
V
V
I
=25 C)
I
I
CC1
CC2
I
SB1
I
CC
LO
SB
OH
LI
OL
30ns
Symbol
C
C
V
CS=V
I
Cycle time=1 s, 100% duty, I
Cycle time=Min, 100% duty, I
I
I
CS=V
CS Vcc-0.2V, Other inputs=0~Vcc
IO
OL
OH
Symbol
IN
IO
IN
=0mA, CS=V
=2.1mA
=Vss to Vcc
=-1.0mA
Vcc
Vss
V
V
30ns
IH
IL
IH
IH
, Other inputs = V
or OE=V
IL
Test Condition
IH
, V
or WE=V
IN
-0.2
V
V
Test Conditions
=V
Min
2.7
2.2
IO
IN
IO
0
=0mA CS 0.2V,V
=0V
IL
=0V
3)
IL
4
1)
IO
or V
=0mA, CS=V
or V
IL
V
IH
IH
IO
, Read
=Vss to Vcc
IN
3.0/3.3
0.2V or V
IL,
Typ
V
0
-
-
K6X4008T1F-Q
K6X4008T1F-B
K6X4008T1F-F
IN
=V
IN
Min
IH
-
-
Vcc-0.2V
or V
IL
Vcc+0.2
Max
3.6
0.6
0
CMOS SRAM
Max
Min
2.4
10
-1
-1
8
2)
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
September 2003
Revision 1.0
Max Unit
0.4
0.3
25
10
10
20
Unit
1
1
2
3
-
Unit
V
V
V
V
pF
pF
mA
mA
mA
mA
V
V
A
A
A
A
A