upa2721agr Renesas Electronics Corporation., upa2721agr Datasheet
upa2721agr
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upa2721agr Summary of contents
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DESCRIPTION The PA2721AGR is N-channel MOS Field Effect Transistor μ designed for power management applications of a notebook computer. FEATURES • Low on-state resistance R = 4.3 mΩ MAX DS(on mΩ ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output Capacitance ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 - Ambient Temperature - ° TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 ...
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GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE - 100 - Channel Temperature - ° DRAIN TO SOURCE ON-STATE RESISTANCE vs. ...
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DYNAMIC INPUT/OUTPUT CHARACTERISTICS Gate Charge - nC G SOURCE TO DRAIN DIODE FORWARD ...
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The information in this document is current as of September, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...