upa2721agr Renesas Electronics Corporation., upa2721agr Datasheet
upa2721agr
Manufacturer Part Number
upa2721agr
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2721AGR.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upa2721agr-E1
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Document No. G18705EJ1V0DS00 (1st edition)
Date Published September 2008 NS
Printed in Japan
• Low on-state resistance
• Low input capacitance
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
• RoHS Compliant
ORDERING INFORMATION
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW ≤ 10
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation (PW = 10 sec)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
designed for power management applications of a notebook
computer.
C
The
R
R
iss
DS(on)1
DS(on)2
μ
μ
PA2721AGR-E1-AT
PA2721AGR-E2-AT
= 7100 pF TYP. (V
μ
2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting T
PA2721AGR is N-channel MOS Field Effect Transistor
PART NUMBER
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
= 4.3 mΩ MAX. (V
= 10 mΩ MAX. (V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
μ
ch
s, Duty Cycle ≤ 1%
Note1
= 25°C, V
Note
Note
DS
Note2
Note3
Note3
DS
= 10 V, V
GS
GS
GS
= 0 V)
= 0 V)
= 5.0 V, I
= 10 V, I
DD
N-CHANNEL POWER MOS FET
= 15 V, R
LEAD PLATING
GS
Pure Sn
D
D
= 0 V)
Note2
= 10 A)
= 10 A)
A
= 25°C, All terminals are connected.)
G
DATA SHEET
= 25 Ω, V
V
V
I
I
P
P
T
T
I
E
D(DC)
D(pulse)
AS
ch
stg
DSS
GSS
T1
T2
SWITCHING
AS
GS
Tape 2500 p/reel
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V, L = 100
PACKING
−55 to +150
±200
±20
±19
150
1.1
2.5
30
19
36
μ
PACKAGE DRAWING (Unit: mm)
8
1
PA2721AGR
μ
5.37 MAX.
mJ
°C
°C
H
W
W
V
V
A
A
A
Power SOP8
0.08 g TYP.
0.40
PACKAGE
1.27
+0.10
–0.05
0.78 MAX.
5
4
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1, 2, 3
4
5, 6, 7, 8: Drain
0.5 ±0.2
6.0 ±0.3
4.4
: Source
: Gate
Source
Drain
2007, 2008
Body
Diode
0.8
0.10
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upa2721agr Summary of contents
Page 1
DESCRIPTION The PA2721AGR is N-channel MOS Field Effect Transistor μ designed for power management applications of a notebook computer. FEATURES • Low on-state resistance R = 4.3 mΩ MAX DS(on mΩ ...
Page 2
ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output Capacitance ...
Page 3
TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 120 - Ambient Temperature - ° TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 ...
Page 4
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE - 100 - Channel Temperature - ° DRAIN TO SOURCE ON-STATE RESISTANCE vs. ...
Page 5
DYNAMIC INPUT/OUTPUT CHARACTERISTICS Gate Charge - nC G SOURCE TO DRAIN DIODE FORWARD ...
Page 6
The information in this document is current as of September, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...