upa2720agr-e2-at Renesas Electronics Corporation., upa2720agr-e2-at Datasheet
upa2720agr-e2-at
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upa2720agr-e2-at Summary of contents
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N-CHANNEL POWER MOSFET DESCRIPTION The μ PA2720AGR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. FEATURES • Low on-state resistance R = 6.6 mΩ MAX ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output Capacitance ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 T - Ambient Temperature - °C A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH <R> 1000 ...
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GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE - Channel Temperature - ° DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN ...
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DYNAMIC INPUT/OUTPUT CHARACTERISTICS Gate Charge - nC G SOURCE TO DRAIN DIODE FORWARD ...
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The information in this document is current as of October, 2008. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...