upa2727ut1a-e2-az Renesas Electronics Corporation., upa2727ut1a-e2-az Datasheet - Page 3

• Manufacturer Part Number: upa2727ut1a-e2-az
• Description: Switching N-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
120
100
35
30
25
20
15
10
80
60
40
20
0
5
0
0
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
4.5 V
4.0 V
10 V
20
T
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
A
0.2
DS
- Ambient Temperature - °C
40
- Drain to Source Voltage - V
1000
0.01
100
0.1
10
100
60
1
0.4
μ
80
Single Pulse
R
V
GS
th(ch-A)
100
0.6
= 3.0 V
1 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
3.8 V
: Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm
A
120
= 25°C)
3.6 V
3.2 V
0.8
140
Pulsed
10 m
3.4 V
Data Sheet G18300EJ1V0DS
160
1
PW - Pulse Width - s
100 m
1
1000
100
35
30
25
20
15
10
0.1
10
5
0
1
0.01
0
FORWARD TRANSFER CHARACTERISTICS
FORWARD BIAS SAFE OPERATING AREA
V
Pulsed
10
Single Pulse
Mounted on a glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mm
DS
R
R
= 10 V
th(ch-A)
th(ch-C)
I
V
I
V
D(pulse)
D(DC)
T
1
GS
DS
A
0.1
= −55°C
- Gate to Source Voltage - V
- Drain to Source Voltage - V
=
=
125°C
100
25°C
75°C
83.3°C/Wi
2.0°C/Wi
2
1
1000
μ
3
PA2727UT1A
10
4
100
5
3