upa2722 Renesas Electronics Corporation., upa2722 Datasheet

upa2722

Manufacturer Part Number

upa2722

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2722.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

upa2722UT1A-E1-AY

Manufacturer:

RENESAS/瑞萨

Quantity:

20 000

Current page: 1 of 6
Download datasheet (178Kb)

Document No. G18296EJ2V0DS00 (2nd edition)

Date Published April 2007 NS CP(K)

Printed in Japan

FEATURES

• Low on-state resistance

• Thin type surface mount package with heat spreader (8-pin HVSON)

• RoHS Compliant

ABSOLUTE MAXIMUM RATINGS (T

THERMAL RESISTANCE

Channel to Ambient Thermal Resistance

Channel to Case (Drain) Thermal Resistance

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade

DESCRIPTION

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW =10 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW ≤ 10

The

DS(on)1

DS(on)2

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm

3. Starting T

PA2722UT1A is N-channel MOSFET designed for DC/DC converter applications.

the device operation. Steps must be taken to stop generation of static electricity as much as possible, and

quickly dissipate it once, when it has occurred.

= 3.3 mΩ MAX. (V

= 4.6 mΩ MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note1

= 25°C, V

Note2

Note3

= 0 V)

= 10 V, I

= 4.5 V, I

= 15 V, R

N-CHANNEL POWER MOSFET

Note2

The mark <R> shows major revised points.

= 15 A)

Note2

= 15 A)

= 25°C, All terminals are connected.)

= 25 Ω, V

DATA SHEET

D(DC)

D(pulse)

stg

SWITCHING

DSS

GSS

th(ch-A)

th(ch-C)

MOS FIELD EFFECT TRANSISTOR

= 20 → 0 V, L = 100

−55 to +150

±170

83.3

±20

±29

150

1.5

4.6

1.5

PA2722UT1A

°C/W

°C

PACKAGE DRAWING (Unit: mm)

EQUIVALENT CIRCUIT

0.2

Gate

0.6 ±0.15

5.4 ±0.2

3.65 ±0.2

6 ±0.2

Source

Drain

0.7 ±0.15

Body

Diode

1, 2, 3

5, 6, 7, 8: Drain

2007

: Source

: Gate

0.10 S

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