upa2706 Renesas Electronics Corporation., upa2706 Datasheet

upa2706

Manufacturer Part Number

upa2706

Description

Switching N-channel Power Mos Fet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2706.pdf (7 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

upa2706GR

Manufacturer:

RENESAS/瑞萨

Quantity:

20 000

Company:

Meier Automation Equipment Co., Limited

Part Number:

upa2706GR-E1-A

Manufacturer:

NEC

Quantity:

20 000

Company:

H&T Electronics

Part Number:

upa2706TP-E1

Quantity:

4 808

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Document No. G16236EJ1V0DS00 (1st edition)

Date Published April 2003 NS CP(K)

Printed in Japan

DESCRIPTION

FEATURES

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

The PA2706GR is N-Channel MOS Field Effect Transistor

designed for DC/DC converters and power management

applications of notebook computers.

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW

Low on-state resistance

Low C

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

3. Starting T

iss

PA2706GR

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

= 15 m MAX. (V

= 22.5 m

: C

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

iss

= 660 pF TYP. (V

10 s, Duty Cycle

MAX. (V

Note1

= 25°C, V

Note3

= 25°C)

= 0 V)

= 10 V, I

= 4.5 V, I

N-CHANNEL POWER MOS FET

= 15 V, R

= 10 V, V

Note2

Power SOP8

PACKAGE

= 5.5 A)

= 25°C, All terminals are connected)

DATA SHEET

= 25

D(pulse)

= 0 V)

D(DC)

SWITCHING

DSS

GSS

stg

, L = 100 H, V

x 2.2 mm

MOS FIELD EFFECT TRANSISTOR

55 to + 150

12.1

150

2.0

PACKAGE DRAWING (Unit: mm)

= 20

5.37 MAX.

0.40

°C

1.27

0 V

+0.10

–0.05

0.78 MAX.

PA2706GR

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1, 2, 3

5, 6, 7, 8 ; Drain

0.5 ±0.2

6.0 ±0.3

4.4

; Source

; Gate

Source

Drain

0.8

Body

Diode

0.10

2003

Related parts for upa2706

upa2706 Summary of contents

Page 1

DESCRIPTION The PA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Low on-state resistance MAX DS(on 22.5 m ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

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upa2706 Renesas Electronics Corporation., upa2706 Datasheet

upa2706

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