upa2702 Renesas Electronics Corporation., upa2702 Datasheet

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upa2702

Manufacturer Part Number
upa2702
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
DESCRIPTION
designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
The PA2702GR is N-Channel MOS Field Effect Transistor
Low on-state resistance
R
R
Low C
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
PART NUMBER
2. Mounted on ceramic substrate of 1200 mm
3. Starting T
PA2702GR
iss
G15724EJ2V0DS00 (2nd edition)
May 2002 NS CP(K)
this device actually used, an additional protection circuit is extemally required if a voltage exceeding the rated
voltage may be applied to this device.
= 9.5 m
= 15.1 m
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
= 900 pF TYP. (V
10 s, Duty Cycle
ch
MAX. (V
MAX. (V
Note1
= 25°C, V
Note3
Note3
DS
A
GS
= 25°C)
GS
= 0 V)
GS
= 0 V)
= 10 V, I
DD
= 4.5 V, I
DS
N-CHANNEL POWER MOS FET
= 15 V, R
Power SOP8
= 10 V, V
Note2
1%
PACKAGE
D
A
= 7.0 A)
D
= 25°C, All terminals are connected.)
= 7.0 A)
G
GS
The mark
= 25
DATA SHEET
= 0 V)
SWITCHING
I
I
D(pulse)
V
V
, L = 100 H, V
D(DC)
T
E
2
T
I
P
GSS
DSS
AS
stg
AS
x 2.2 mm
ch
T
MOS FIELD EFFECT TRANSISTOR
shows major revised points.
–55 to +150
16.9
150
2.0
30
13
20
13
52
GS
= 20
PACKAGE DRAWING (Unit: mm)
8
1
5.37 MAX.
mJ
W
°C
°C
0 V
V
V
A
A
A
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
PA2702GR
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1, 2, 3
4
5, 6, 7, 8 ; Drain
©
0.5 ±0.2
6.0 ±0.3
4.4
Source
; Source
; Gate
Drain
Body
Diode
0.8
2002
0.10

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upa2702 Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION The PA2702GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES Low on-state resistance R = 9.5 m MAX DS(on)1 GS ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 25˚ 25˚C 75˚C 150˚C 0.1 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 Pulsed 4 100 125 150 T - Channel Temperature - ˚C ch ...

Page 6

Data Sheet G15724EJ2V0DS PA2702GR ...

Page 7

Data Sheet G15724EJ2V0DS PA2702GR 7 ...

Page 8

The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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