upa2713 Renesas Electronics Corporation., upa2713 Datasheet
upa2713
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upa2713 Summary of contents
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DESCRIPTION The PA2713GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-state resistance MAX DS(on ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 100 I ...
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DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 40 Pulsed 4 4 0.2 - 0 Drain to Source Voltage - ...
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DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 4 Pulsed 100 T - Channel Temperature - °C ...
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SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 6 Starting T = ...
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The information in this document is current as of January, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...