upa2710 Renesas Electronics Corporation., upa2710 Datasheet

upa2710

Manufacturer Part Number

upa2710

Description

Switching P-channel Power Mos Fet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2710.pdf (7 pages)

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Document No. G15978EJ3V0DS00 (3rd edition)

Date Published February 2003 NS CP(K)

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

designed for power management applications of notebook

computers and Li-ion battery protection circuit.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW

The PA2710GR is P-Channel MOS Field Effect Transistor

Low on-state resistance

Low C

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

3. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec

4. Starting T

2. Mounted on ceramic substrate of 1200 mm

iss

PA2710GR

= 5.5 m

= 9.0 m

= 11 m

: C

degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,

and quickly dissipate it once, when it has occurred.

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

= 4300 pF TYP.

10 s, Duty Cycle

MAX. (V

Note1

= 25°C, V

Note2

Note3

Note4

= 0 V)

= –4.0 V, I

= –10 V, I

= –4.5 V, I

= –15 V, R

P-CHANNEL POWER MOS FET

Power SOP8

PACKAGE

The mark

= –7.5 A)

= 25°C, All terminals are connected.)

= –7.5 A)

DATA SHEET

= 25

SWITCHING

D(pulse)

shows major revised points.

D(DC)

GSS

DSS

, L = 100 H, V

stg

x 2.2 mm

MOS FIELD EFFECT TRANSISTOR

–55 to + 150

m100

22.5

–30

m20

m15

150

= –20

PACKAGE DRAWING (Unit: mm)

5.37 MAX.

°C

0.40

1.27

0 V

+0.10

–0.05

0.78 MAX.

PA2710GR

0.12 M

EQUIVALENT CIRCUIT

Gate

1, 2, 3

5, 6, 7, 8 : Drain

0.5 ±0.2

6.0 ±0.3

4.4

: Source

: Gate

Source

Drain

Body

Diode

0.8

0.10

2002

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upa2710 Summary of contents

Page 1

P-CHANNEL POWER MOS FET DESCRIPTION The PA2710GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-state resistance R = 5.5 m MAX – ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA - 1000 I D(pulse) ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE - 120 4 100 0 Drain to Source Voltage - V ...

Page 5

DRAIN TO SOURCE ON-STATERESISTANCE vs. CHANNEL TEMPERATURE 4 4 uls 7 100 T - Channel Temperature - °C ch ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 Starting T = 25° ...

Page 7

The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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