upa2747 Renesas Electronics Corporation., upa2747 Datasheet
upa2747
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upa2747 Summary of contents
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N-CHANNEL POWER MOSFET DESCRIPTION μ The PA2747UT1A is N-channel MOS Field Effect Transistor designed for DC/DC converter applications. FEATURES • Low on-state resistance • 4.5 mΩ MAX DS(on)1 GS • 6.8 ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current I Gate Leakage Current I Gate to Source Cut-off Voltage V Note Forward Transfer Admittance | y Note Drain to Source On-state Resistance R R Input Capacitance C Output Capacitance ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 - Ambient Temperature - ° TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Single pulse ...
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GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 2.5 2 1.5 1 0 Channel Temperature - ° DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 Pulsed 4.5 V ...
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DYNAMIC INPUT CHARACTERISTICS Gate Charge - nC G ORDERING INFORMATION PART NUMBER LEAD PLATING Note μ PA2747UT1A-E1-AY Pure Sn Note μ PA2747UT1A-E2-AY ...
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The information in this document is current as of November, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...