upa2742 Renesas Electronics Corporation., upa2742 Datasheet

upa2742

Manufacturer Part Number

upa2742

Description

Switching N-channel Power Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2742.pdf (6 pages)

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Document No. G18872EJ1V0DS00 (1st edition)

Date Published May 2008 NS

Printed in Japan

FEATURES

• Low on-state resistance

• Low input capacitance

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)

• RoHS Compliant

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in the external electrode and other parts.)

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Total Power Dissipation (PW = 10 sec)

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

DESCRIPTION

designed for power management applications of a notebook

computer.

Notes 1. PW ≤ 10

The

iss

DS(on)1

DS(on)2

PA2742GR-E1-AT

PA2742GR-E2-AT

= 4600 pF TYP. (V

2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt

3. Starting T

PA2742GR is N-channel MOS Field Effect Transistor

PART NUMBER

= 4.8 mΩ MAX. (V

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

= 8.0 mΩ MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

s, Duty Cycle ≤ 1%

Note1

Note

= 25°C, V

Note2

Note3

= 10 V, V

= 0 V)

= 10 V, I

= 6 V, I

= 17.5 V, R

N-CHANNEL POWER MOSFET

LEAD PLATING

= 0 V)

Pure Sn

Note2

= 9 A)

= 25°C, All terminals are connected.)

DATA SHEET

D(DC)

D(pulse)

= 25 Ω, V

stg

DSS

GSS

SWITCHING

Tape 2500 p/reel

MOS FIELD EFFECT TRANSISTOR

PACKING

= 20 → 0 V, L = 100

−55 to +150

±150

28.9

±25

±17

150

1.1

2.5

PACKAGE DRAWING (Unit: mm)

5.37 MAX.

°C

Power SOP8

0.08 g TYP.

0.40

PACKAGE

1.27

+0.10

–0.05

PA2742GR

0.78 MAX.

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1, 2, 3

5, 6, 7, 8: Drain

0.5 ±0.2

6.0 ±0.3

4.4

: Source

: Gate

Source

Drain

Body

Diode

0.8

2007, 2008

0.10

Related parts for upa2742

upa2742 Summary of contents

Page 1

N-CHANNEL POWER MOSFET DESCRIPTION μ The PA2742GR is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer. FEATURES • Low on-state resistance R = 4.8 mΩ MAX DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

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upa2742 Renesas Electronics Corporation., upa2742 Datasheet

upa2742

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