upa2732 Renesas Electronics Corporation., upa2732 Datasheet
upa2732
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upa2732 Summary of contents
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DESCRIPTION The μ PA2732T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES • Low on-state resistance = − 3.7 mΩ MAX. (V DS(on)1 GS ...
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ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...
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TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 T - Ambient Temperature - °C A TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Single ...
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GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -2.5 -2 -1.5 -1 -0 Channel Temperature - °C ch DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT − 4. − 10V ...
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SWITCHING CHARACTERISTICS 10000 1000 t d(off 100 − 15V (on − 10V Ω -0.1 -1 -10 -100 I - Drain Current - A ...
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The information in this document is current as of January, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...