upa2754 Renesas Electronics Corporation., upa2754 Datasheet

no-image

upa2754

Manufacturer Part Number
upa2754
Description
Switching N-channel Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
upa2754GR
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
upa2754GR-E1-A
Manufacturer:
TST
Quantity:
1 000
Part Number:
upa2754GR-E1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Company:
Part Number:
upa2754GR-E1-A
Quantity:
1 823
Part Number:
upa2754GR-E1-AT
Manufacturer:
RENESAS
Quantity:
8 000
Document No. G15816EJ1V0DS00 (1st edition)
Date Published January 2003 NS CP(K)
Printed in Japan
DESCRIPTION
Transistor designed for Li-ion battery protection circuit
and power management application.
FEATURES
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (2 units)
Total Power Dissipation (1 unit)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
The PA2754GR is Dual N-channel MOS Field Effect
Dual chip type
Low on-state resistance
R
R
R
Low C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)4
PART NUMBER
2. T
3. Starting T
iss
PA2754GR
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
= 14.5 m
= 15.0 m
= 18.6 m
: C
A
iss
= 25°C, Mounted on ceramic substrate of 2000 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 1940 pF TYP. (V
10 s, Duty cycle
Note2
ch
MAX. (V
MAX. (V
MAX. (V
Note1
= 25°C, V
Note3
Note3
DS
GS
GS
GS
GS
= 0 V)
= 0 V)
DD
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
Note2
Note2
DS
N-CHANNEL POWER MOS FET
= 15 V, R
Power SOP8
1%
PACKAGE
= 10 V, V
D
D
D
= 5.5 A)
= 5.5 A)
= 5.5 A)
A
G
I
= 25°C, All terminals are connected.)
I
D(pulse)
V
V
D(DC)
= 25
GS
T
E
T
P
P
I
DATA SHEET
DSS
GSS
AS
stg
AS
ch
T
T
SWITCHING
= 0 V)
, V
GS
= 12
MOS FIELD EFFECT TRANSISTOR
55 to +150
12.1
±12
±11
±88
150
2.0
1.7
30
11
2
x 2.2 mm
0 V
8
1
5.37 MAX.
PACKAGE DRAWING (Unit: mm)
0.40
1.27
mJ
°C
°C
W
W
V
V
A
A
A
+0.10
–0.05
0.78 MAX.
5
4
PA2754GR
0.12 M
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
1
2
7, 8: Drain 1
3
4
5, 6: Drain 2
0.5 ±0.2
: Source 1
: Gate 1
: Source 2
: Gate 2
6.0 ±0.3
(1/2 circuit)
4.4
Source
Drain
Body
Diode
0.8
0.10
2001

Related parts for upa2754

upa2754 Summary of contents

Page 1

DESCRIPTION The PA2754GR is Dual N-channel MOS Field Effect Transistor designed for Li-ion battery protection circuit and power management application. FEATURES Dual chip type Low on-state resistance R = 14.5 m MAX 4 DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Note Gate Cut-off Voltage V Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 125 T - Ambient Temperature - C A FORWARD BIAS SAFE OPERATING AREA 1000 R Limited DS(on) ...

Page 4

DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Pulsed 0.4 0.8 1 Drain to Source Voltage - V DS GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 2 V ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 Pulsed 2 3 100 T - Channel Temperature - °C ch SWITCHING CHARACTERISTICS 1000 V = ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 12 Starting T = 25°C ch 0.1 ...

Page 7

The information in this document is current as of January, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

Related keywords