upa2782 Renesas Electronics Corporation., upa2782 Datasheet - Page 4

• Manufacturer Part Number: upa2782
• Description: Switching N-channel Power Mos Fet/schottky Barrier Diode
• Manufacturer: Renesas Electronics Corporation.

4
30
25
20
15
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
50
45
40
35
30
25
20
15
10
5
0
5
0
0.1
0
Pulsed
V
GS
= 10 V
V
DS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- Drain to Source Voltage - V
0.5
1000
100
0.1
I
10
D
1
1
V
1 m
- Drain Current - A
GS
4.5 V
10 V
= 4.0 V
4.5 V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY)
1
4.0 V
10 m
10
1.5
Pulsed
100 m
PW - Pulse Width - s
100
Data Sheet G16421EJ1V0DS
Mounted on ceramic substrate of 1200 mm
Single pulse
2
1
30
25
20
15
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
2.5
1.5
0.5
5
0
3
2
1
0
- 50
0
R
th(j-A)
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
= 125°C/W
GS
2
T
x 2.2 mm
ch
- Gate to Source Voltage - V
100
5
0
- Channel Temperature - C
10
50
1000
I
D
= 5.5 A
15
100
PA2782GR
V
I
D
DS
Pulsed
= 1 mA
= 10 V
20
150