upa2590 Renesas Electronics Corporation., upa2590 Datasheet - Page 4

• Manufacturer Part Number: upa2590
• Description: N- And P-channel Mosfet For Switching
• Manufacturer: Renesas Electronics Corporation.

P-channel MOSFET
Note Pulsed
4
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Body Diode Forward Voltage
GS
0
TEST CIRCUIT 1 SWITCHING TIME
τ = 1 s
Duty Cycle ≤ 1%
PG.
(−)
μ
τ
CHARACTERISTICS
R
G
D.U.T.
Note
Note
R
V
DD
L
Note
V
V
Wave Form
Wave Form
V
V
Wave Form
Wave Form
GS
GS
DS
DS
I
I
V
| y
R
R
C
C
C
t
t
t
t
Q
V
DSS
GSS
d(on)
r
d(off)
f
SYMBOL
V
V
V
V
GS(off)
DS(on)1
DS(on)2
iss
oss
rss
F(S-D)
G
V
V
fs
GS (−)
GS (−)
DS (−)
DS (−)
0
0
DS
DS
0
0
|
10%
10%
t
t
d(on)
d(on)
90%
90%
Data Sheet G19217EJ1V0DS
t
t
on
on
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
I
I
10% 10%
10% 10%
t
t
D
F
r
r
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
= −4.5 A, V
= −4.5 A
= 6 Ω
V
V
= −30 V, V
= m16 V, V
= −10 V, I
= −10 V, I
= −10 V, I
= −4.5 V, I
= −10 V,
= 0 V,
= −15 V, I
= −10 V,
= −24 V, V
t
t
GS
GS
d(off)
d(off)
TEST CONDITIONS
t
t
off
off
90%
90%
90%
90%
t
t
GS
D
D
f
f
D
D
D
GS
DS
GS
= −1 mA
= −2 A
= −2 A
= −2 A,
= 0 V
= −2 A
= 0 V
= 0 V
= −10 V,
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
1.0
1
I
G
= −2 mA
50 Ω
TYP.
0.95
310
6.5
7.5
3.5
56
75
78
65
33
26
D.U.T.
MAX.
m10
105
2.5
μ
−1
72
PA2590
R
V
UNIT
DD
L
mΩ
mΩ
μ
μ
nC
pF
pF
pF
ns
ns
ns
ns
V
S
V
A
A