upa2451b Renesas Electronics Corporation., upa2451b Datasheet - Page 3

• Manufacturer Part Number: upa2451b
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
1000
120
100
0.01
100
80
60
40
20
0.1
10
0
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
0.1
0
FORWARD BIAS SAFE OPERATING AREA
(at V
R
Single pulse
Mounted on ceramic board of
50 cm
P
DS(on)
D
I
D(DC)
GS
(FET1) : P
V
25
T
DS
2
Limited
= 4.5 V)
A
x 1.1 mm
- Ambient Temperature - °C
- Drain to Source Voltage - V
1000
100
50
0.1
10
DC (2 units)
D
1
(FET2) = 1:1
1
1 m
75
Single pulse
P
D
(FET1) : P
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
I
D(pulse)
10 m
10
125
D
(FET2) = 1:1
PW = 10 µs
150
A
10 ms
100 µs
1 ms
30 ms
= 25°C)
100 m
Data Sheet G16636EJ1V0DS
175
100
PW - Pulse Width - s
1
Mounted on FR-4 board of
50 cm
Mounted on ceramic board of
50 cm
2.5
1.5
0.5
3
2
1
0
2
10
2
x 1.1 mm
0
x 1.1 mm
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
- Ambient Temperature - °C
100
50
Mounted on ceramic board of
50 cm
Mounted on FR-4 board of
50 cm
75
2
x 1.1 mm, 2 units
1000
2
100
x 1.1 mm, 2 units
125
µ
150
PA2451B
175
3